Minority carrier diffusion length in GaN and ZnSe

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Photonics, Electrical Engineering, Engineering +13

High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 960 citations

Optical Materials, Engineering, High Dislocation Densities +18

Charge collection scanning electron microscopy

H. J. Leamy · Journal of Applied Physics · 1982 · 774 citations

Engineering, Microscopy, Semiconductor Materials +16

Shortest wavelength semiconductor laser diode

Isamu Akasaki, S. Sota, Hiroshi Sakai et al. · Electronics Letters · 1996 · 462 citations

Photonics, Electrical Engineering, Engineering +11

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Weijin Qian, Marek Skowroński, Marc De Graef et al. · Applied Physics Letters · 1995 · 284 citations

Materials Science, Aluminium Nitride, Wide-bandgap Semiconductor +13