Tsunenori Asatsuma

Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers

Shigetaka Tomiya, Kazuo Funato, Tsunenori Asatsuma et al. · Applied Physics Letters · 2000 · 56 citations

Wide-bandgap Semiconductor, Engineering, Chemical Deposition +17

GaN-based blue laser diodes

Takao Miyajima, T. Tojyo, T. Asano et al. · Journal of Physics Condensed Matter · 2001 · 44 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Room-temperature continuous-wave operation of GaInN/GaNmultiquantum well laser diode

Tsutomu Kobayashi, Fumihiko Nakamura, Kaori Naganuma et al. · Electronics Letters · 1998 · 41 citations

CW Operation of AlGaInN–GaN Laser Diodes

T. Asano, Katsunori Yanashima, Tsunenori Asatsuma et al. · physica status solidi (a) · 1999 · 29 citations

Algainn–gan Laser Diodes, Engineering, Buried-ridge Laser +11

Minority carrier diffusion length in GaN and ZnSe

Takao Miyajima, M. Ozawa, Tsunenori Asatsuma et al. · Journal of Crystal Growth · 1998 · 28 citations

Categoryiii-v Semiconductor, Applied Physics, Physics +1