Kaori Naganuma

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

Shimpei Takagi, Yohei Enya, Takashi Kyono et al. · Applied Physics Express · 2012 · 118 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +17

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

Katsunori Yanashima, Hiroshi Nakajima, Kunihiko Tasai et al. · Applied Physics Express · 2012 · 47 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Room-temperature continuous-wave operation of GaInN/GaNmultiquantum well laser diode

Tsutomu Kobayashi, Fumihiko Nakamura, Kaori Naganuma et al. · Electronics Letters · 1998 · 41 citations

Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

Shu Goto, Makoto Ohta, Yoshifumi Yabuki et al. · physica status solidi (a) · 2003 · 35 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

7W operation of 644 nm wavelength laser diode arrays with index-guided structure

Daisuke Imanishi, Yoichi Sato, Kaori Naganuma et al. · Electronics Letters · 2005 · 23 citations

Photonics, Optical Materials, Engineering +10