Concepedia

Assembling strained InAs islands by chemical beam epitaxy

Mark S. Miller, S. Jeppesen, Dan Hessman, Bernhard Kowalski, Ivan Maximov, B. Junno, Lars Samuelson

Solid-State Electronics · 1996 · 16 citations · 9 references

DOI

Concepts

References

9

Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

D. Leonard, Mohan Krishnamurthy, C.M. Reaves et al. · Applied Physics Letters · 1993 · 1.7K citations

, , +15

Critical layer thickness for self-assembled InAs islands on GaAs

D. Leonard, K. Pond, P. M. Petroff · Physical review. B, Condensed matter · 1994 · 959 citations

, , +17

Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations

, , +17

Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

J. Oshinowo, M. Nishioka, Shintaro Ishida et al. · Applied Physics Letters · 1994 · 238 citations

, , +17

Nature of strained InAs three-dimensional island formation and distribution on GaAs(100)

A. Madhukar, Qiwei Xie, P. Chen et al. · Applied Physics Letters · 1994 · 237 citations

, , +17