J. Oshinowo

Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition

J. Oshinowo, M. Nishioka, Shintaro Ishida et al. · Applied Physics Letters · 1994 · 237 citations

Materials Science, Semiconductors, High Resolution +12

<i>In</i> <i>situ</i> fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition

M. Kitamura, M. Nishioka, J. Oshinowo et al. · Applied Physics Letters · 1995 · 170 citations

Materials Science, Semiconductors, Ii-vi Semiconductor +14

Edge magnetoplasmons in the fractional-quantum-Hall-effect regime

M. Wassermeier, J. Oshinowo, J. P. Kotthaus et al. · Physical review. B, Condensed matter · 1990 · 89 citations

Magnetism, Spintronics, Quantum Science +15

Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition

J. Oshinowo, Masao Nishioka, Satomi Ishida et al. · Japanese Journal of Applied Physics · 1994 · 41 citations

Materials Science, Semiconductors, Aluminium Nitride +14

Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low-voltage electron beam lithography

R. Steffen, Th. Koch, J. Oshinowo et al. · Applied Physics Letters · 1996 · 41 citations

Electrical Engineering, Wet Chemical Etching, Engineering +15