Area Density Control of Quantum-Size InGaAs/Ga(Al)As Dots by Metalorganic Chemical Vapor Deposition

Abstract

We have investigated the accumulation of InGaAs dots ( ∼15 nm) on GaAs and AlGaAs surfaces, by metalorganic chemical vapor deposition (MOCVD). Scanning electron micrography (SEM) shows highly uniform dots formed by the Stranski-Krastanow growth mode. The average area InGaAs dot density can be controlled from 10 8 cm -2 up to more than 10 11 cm -2 by substrate off-angle orientation, deposition thickness, and growth temperature. The results indicate high area dot density for low surface diffusion.