Japanese Journal of Applied Physics · 1994 · 41 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionQuantum DotsSemiconductor NanomaterialsSemiconductor PhysicsSemiconductor SurfacesThin-film DepositionMetalorganic Chemical Vapor DepositionSemiconductor Quantum DotsStranski - Krastanov GrowthSubstrate Orientation EffectsSurface Diffusion In Thin FilmsSurface GrowthTemperature-dependent GrowthThin-film Growth Mechanisms
We have investigated the accumulation of InGaAs dots ( ∼15 nm) on GaAs and AlGaAs surfaces, by metalorganic chemical vapor deposition (MOCVD). Scanning electron micrography (SEM) shows highly uniform dots formed by the Stranski-Krastanow growth mode. The average area InGaAs dot density can be controlled from 10 8 cm -2 up to more than 10 11 cm -2 by substrate off-angle orientation, deposition thickness, and growth temperature. The results indicate high area dot density for low surface diffusion.
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Self-organized growth of regular nanometer-scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations
Effect of strain on surface morphology in highly strained InGaAs films
C. W. Snyder, B. G. Orr, David A. Kessler et al. · Physical Review Letters · 1991 · 499 citations