M. Wassermeier - Concepedia

Author

M. Wassermeier

Paul Drude Institute for Solid State Electronics

Also Known As

M Wassermeier, M. Wassermeier, Matthias Wassermeier, Wassermeier, M., Wassermeier, Matthias

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Paul Drude Institute for Solid State Electronics University of California, Santa Barbara Universität Hamburg Technische Universität Berlin University of Michigan

About

M. Wassermeier is an author at Paul Drude Institute for Solid State Electronics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	35	1.8K
2	Applied Physics	22	34	1.8K
3	Electrical Engineering	11	11	957
4	Natural Sciences	5	5	194
5	Biomedical Engineering	1	1	15

M. Wassermeier

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Room-Temperature Spin Injection from Fe into GaAs H. J. Zhu, M. Ramsteiner, H. Kostial, Physical Review Letters SemiconductorsMagnetismSpintronicsElectrical EngineeringSpin Injection Efficiency	2001	701
Reconstruction of the GaAs (311)<i>A</i>surface M. Wassermeier, J. Sudijono, Matthew D. Johnson, Physical review. B, Condensed matter SemiconductorsQuantum ScienceMaterials ScienceDepth ModulationEngineering	1995	124
Atom-resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy V. Bressler-Hill, M. Wassermeier, K. Pond, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringMicroscopyOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1992	97
Edge magnetoplasmons in the fractional-quantum-Hall-effect regime M. Wassermeier, J. Oshinowo, J. P. Kotthaus, Physical review. B, Condensed matter MagnetismSpintronicsQuantum ScienceEdge MagnetoplasmonsMagnetoplasmonics	1990	89
Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs H. Yang, O. Brandt, M. Wassermeier, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	1996	59
Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions M. Wassermeier, Itaru Kamiya, D. E. Aspnes, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Optical MaterialsEngineeringSurface Dimer ExcitationsOptical CharacterizationSpectroscopic Property	1991	54
Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth Mohan Krishnamurthy, M. Wassermeier, D. R. M. Williams, Applied Physics Letters Materials ScienceEngineeringElectron-beam LithographyPhysicsSurface Science	1993	46
Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) J.‐T. Zettler, J. Rumberg, K. Ploska, physica status solidi (a) Optical MaterialsEngineeringCrystal Growth TechnologyMbe GrowthSemiconductor Nanostructures	1995	43
Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy Nicolas Bertru, O. Brandt, M. Wassermeier, Applied Physics Letters Materials ScienceAtomic Force MicroscopyEpitaxial GrowthMaterial AnalysisEngineering	1996	42
Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy O. Brandt, Hui Yang, A. Trampert, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsAbrupt Interface	1997	41

Page 1