Physical Review Letters · 2001 · 705 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsQuantum OptoelectronicsSemiconductor Device MaterialsSpintronic MaterialsSpintronicsCircular PolarizationCurrent Injection EfficiencyElectroluminescencePolarization DegreeSpin Dynamics In SemiconductorsSpin InjectionTunneling CurrentTunneling Effects
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
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Electronic analog of the electro-optic modulator
Supriyo Datta, Biswajit Das · Applied Physics Letters · 1990 · 4.8K citations
Electrical spin injection in a ferromagnetic semiconductor heterostructure
Y. Ohno, D. K. Young, Bernd Beschoten et al. · Nature · 1999 · 2.5K citations
Natural Sciences, Electrical Engineering, Materials Science +14
Injection and detection of a spin-polarized current in a light-emitting diode
R. Fiederling, M. Keim, G. Reuscher et al. · Nature · 1999 · 1.9K citations