Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs

Deep submicron CMOS based on silicon germanium technology

A.G. O’Neill, D.A. Antoniadis · IEEE Transactions on Electron Devices · 1996 · 75 citations

Electrical Engineering, Engineering, Vlsi Design +9

Oxidation-induced traps near SiO2/SiGe interface

C. G. Ahn, H. S. Kang, Y.K. Kwon et al. · Journal of Applied Physics · 1999 · 60 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +13

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Michael J. Palmer, G. Braithwaite, T. J. Grasby et al. · Applied Physics Letters · 2001 · 45 citations · Full text

Electrical Engineering, Effective Mobilities, Engineering +11

CVD diamond thin film for IR optics and X-ray optics

Xuantong Ying, Xinmin Xu · Thin Solid Films · 2000 · 40 citations

Materials Science, Diamond-like Carbon, Optical Materials +6

DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology

S. Okhonin, M. A. Py, B. Georgescu et al. · IEEE Transactions on Electron Devices · 1999 · 37 citations · Full text

Electrical Engineering, Hole Confinement, Engineering +13