T. J. Grasby

Diffusion of boron in germanium at 800–900°C

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar et al. · Journal of Applied Physics · 2004 · 120 citations

Natural Sciences, Materials Engineering, Materials Science +16

Characterization and modeling of n-n Si∕SiC heterojunction diodes

Amador Pérez‐Tomás, Michael R. Jennings, M. Davis et al. · Journal of Applied Physics · 2007 · 62 citations

Engineering, Materials Engineering, Materials Science +17

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Michael J. Palmer, G. Braithwaite, T. J. Grasby et al. · Applied Physics Letters · 2001 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

R. J. H. Morris, T. J. Grasby, R. Hammond et al. · Semiconductor Science and Technology · 2004 · 43 citations

Engineering, Materials Engineering, Materials Science +17

High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate

G. Nicholas, T. J. Grasby, D. J. F. Fulgoni et al. · IEEE Electron Device Letters · 2007 · 41 citations

Engineering, Electrical Engineering, Materials Science +13