D. J. F. Fulgoni

Reverse graded relaxed buffers for high Ge content SiGe virtual substrates

Vishal Ajit Shah, A. Dobbie, M. Myronov et al. · Applied Physics Letters · 2008 · 91 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors

Lorenzo Colace, Pasquale Ferrara, Gaetano Assanto et al. · IEEE Photonics Technology Letters · 2007 · 70 citations

Electrical Engineering, Semiconductor Device, Engineering +13

High Mobility Strained Ge pMOSFETs With High-$\kappa$ /Metal Gate

G. Nicholas, T. J. Grasby, D. J. F. Fulgoni et al. · IEEE Electron Device Letters · 2007 · 41 citations

Semiconductors, Materials Engineering, Electrical Engineering +12

Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers

Lorenzo Colace, Gaetano Assanto, D. J. F. Fulgoni et al. · Journal of Lightwave Technology · 2008 · 35 citations

Engineering, Optoelectronic Devices, Integrated Circuits +17

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Andrew P. Knights, R. Gwilliam, B.J. Sealy et al. · Journal of Applied Physics · 2001 · 34 citations

Materials Science, Materials Engineering, Electrical Engineering +15