Vishal Ajit Shah - Concepedia

Author

Vishal Ajit Shah

Also Known As

V A Shah, V. A. Shah, V. Shah, V.A. Shah, Vatsal A. Shah, Virti Shah, Vishal A Shah, Vishal A. Shah, Vishal Ajit Shah, Vishal Shah

134

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

University of Warwick Centro Nacional de Microelectrónica Aalto University Institut de Microelectrònica de Barcelona VTT Technical Research Centre of Finland

About

Vishal Ajit Shah is an author at University of Warwick specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	29	952
2	Applied Physics	17	28	935
3	Electrical Engineering	15	22	681
4	Materials Engineering	9	9	323
5	Chemical Engineering	1	1	15

Vishal Ajit Shah

Publications

Citations

H-Index

Page 1

	Year	Citations
Modelling the inhomogeneous SiC Schottky interface Peter Michael Gammon, Amador Pérez‐Tomás, Vishal Ajit Shah, Journal of Applied Physics Significant InhomogeneityEngineeringSemiconductor DeviceSemiconductorsElectronic Devices	2013	94
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates Vishal Ajit Shah, A. Dobbie, M. Myronov, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringRelaxed GeEngineering	2008	91
Ultra-high hole mobility exceeding one million in a strained germanium quantum well A. Dobbie, M. Myronov, R. J. H. Morris, Applied Physics Letters SemiconductorsQuantum ScienceMaterials ScienceHigh Hole MobilityEngineering	2012	90
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates Vishal Ajit Shah, A. Dobbie, M. Myronov, Journal of Applied Physics Materials ScienceElectrical EngineeringWafer Scale ProcessingEngineeringLower Tdd	2010	85
Characterization and modeling of n-n Si∕SiC heterojunction diodes Amador Pérez‐Tomás, Michael R. Jennings, M. Davis, Journal of Applied Physics Electrical EngineeringSemiconductor DeviceEngineeringSi DopingNanoelectronics	2007	62
High quality relaxed Ge layers grown directly on a Si(001) substrate Vishal Ajit Shah, A. Dobbie, M. Myronov, Solid-State Electronics Materials ScienceMaterials EngineeringGe LayersEpitaxial GrowthEngineering	2011	58
Spin transport in germanium at room temperature Chengchao Shen, T. Trypiniotis, Kiyoung Lee, Applied Physics Letters MagnetismSpintronicsElectrical EngineeringRoom TemperatureSpin-dependent Transport	2010	47
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001) Vishal Ajit Shah, A. Dobbie, M. Myronov, Thin Solid Films Materials ScienceMaterials EngineeringLayer ThicknessEpitaxial GrowthEngineering	2011	47
Analysis of inhomogeneous Ge/SiC heterojunction diodes Peter Michael Gammon, Amador Pérez‐Tomás, Vishal Ajit Shah, Journal of Applied Physics SemiconductorsTotal Contact AreaElectrical EngineeringElectronic DevicesRichardson Constant	2009	31
An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition M. Myronov, C. Morrison, John Halpin, Japanese Journal of Applied Physics Materials ScienceSemiconductorsWide-bandgap SemiconductorElectronic DevicesEngineering	2014	31

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