Electrical characteristics of Ta2O5 based capacitors with different gate electrodes

High-κ gate dielectrics: Current status and materials properties considerations

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Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

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Defect dominated charge transport in amorphous Ta2O5 thin films

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Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films

S. Blonkowski, M. Regache, A. Halimaoui · Journal of Applied Physics · 2001 · 106 citations

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