Concepedia

Author

E. Atanassova

Georgi Nadjakov Institute of Solid State Physics

Also Known As

Atanassova, Elena, E Atanassova, E. ATANASSOVA, E. Atanassova, E. D. Atanassova, E.D. Atanassova, Elena Atanassova

231

Publications

2.7K

Citations

26

H-Index

58

Concepts

All Affiliations

Georgi Nadjakov Institute of Solid State PhysicsBulgarian Academy of SciencesFZU ‒ Institute of Physics of the Academy of Sciences of the Czech RepublicInstitute of Mechanics
EA

About

E. Atanassova is an author at Georgi Nadjakov Institute of Solid State Physics specializing in engineering, applied physics, and materials science.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

24

60

1.9K

2

Applied Physics

23

56

1.7K

3

Electrical Engineering

17

33

698

4

Materials Engineering

17

27

921

5

Chemical Engineering

2

2

41

E. Atanassova

×

72

Publications

2.2K

Citations

26

H-Index

YearCitations

AES and XPS study of thin RF-sputtered Ta2O5 layers

E. Atanassova, T. Dimitrova, J. Koprinarova

Applied Surface Science

1995

197

X-ray photoelectron spectroscopy of thermal thin Ta2O5 films on Si

E. Atanassova, D. Spassov

Applied Surface Science

1998

161

XPS study of N2 annealing effect on thermal Ta2O5 layers on Si

E. Atanassova, G. Tyuliev, A. Paskaleva,

Applied Surface Science

2003

118

Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs

E. Atanassova, A. Paskaleva

Microelectronics Reliability

2006

103

Influence of γ radiation on thin Ta2O5–Si structures

E. Atanassova, A. Paskaleva, D. Spassov,

Microelectronics Journal

2001

88

Thin RF sputtered and thermal Ta2O5 on Si for high density DRAM application

E. Atanassova

Microelectronics Reliability

1999

74

High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties

E. Atanassova, M. Kalitzova, Giuseppe Zollo,

Thin Solid Films

2003

69

Crystallization effects in oxygen annealed Ta2O5 thin films on Si

T. Dimitrova, K. Arshak, E. Atanassova

Thin Solid Films

2001

69

Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

E. Atanassova, N. Novkovski, A. Paskaleva,

Solid-State Electronics

2002

65

Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si

E. Atanassova, D. Spassov, A. Paskaleva,

Microelectronics Journal

2002

40

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