Determination of interface state density especially at the band edges by noise measurements on MOSFETs

Self-Consistent Results for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si Inversion Layers

Frank Stern · Physical review. B, Solid state · 1972 · 1.2K citations

Engineering, Materials Engineering, Materials Science +17

Semiconductor surface physics

C. Hilsum · Journal of Physics and Chemistry of Solids · 1958 · 616 citations

Low frequency noise in MOS transistors—I Theory

S. Christensson, Ingemar Lundström, C. Svensson · Solid-State Electronics · 1968 · 437 citations

Engineering, Electrical Engineering, Microelectronics +13

Characterization of low 1/f noise in MOS transistors

F.M. Klaassen · IEEE Transactions on Electron Devices · 1971 · 153 citations

Engineering, Electrical Engineering, Microelectronics +16

Interface states at the SiO2-Si interface

M. Schulz · Surface Science · 1983 · 113 citations

Natural Sciences, Materials Science, Physics +14