KrF excimer laser induced ablation–planarization of GaN surface

Room-temperature photoenhanced wet etching of GaN

M. S. Minsky, Mark White, Evelyn L. Hu · Applied Physics Letters · 1996 · 289 citations

Materials Science, Chemical Engineering, Electronic Devices +15

High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

S.A. Smith, Colin A. Wolden, M. D. Bremser et al. · Applied Physics Letters · 1997 · 174 citations

Aluminium Nitride, Selective Etching, Engineering +16

Dopant-selective photoenhanced wet etching of GaN

C. Youtsey, G. E. Bulman, I. Adesida · Journal of Electronic Materials · 1998 · 83 citations

Electrical Engineering, Engineering, Applied Physics +4

Precise microfabrication of wide band gap semiconductors (SiC and GaN) by VUV–UV multiwavelength laser ablation

J. Zhang, Koji Sugioka, Satoshi Wada et al. · Applied Surface Science · 1998 · 48 citations

Materials Science, Advanced Laser Processing, Engineering +8

GaN growth by a controllable RF-excited nitrogen source

J. M. Van Hove, G. J. Cosimini, Erik Nelson et al. · Journal of Crystal Growth · 1995 · 45 citations

Electrical Engineering, Engineering, Gan Growth +4