Metal contacts to gallium nitride

James Foresi, T. D. Moustakas

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringGold ContactsEngineering +10

Room-temperature photoenhanced wet etching of GaN

M. S. Minsky, Mark White, Evelyn L. Hu

Applied Physics Letters

Materials ScienceChemical EngineeringElectronic DevicesEngineeringHecd Laser Power +13

Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo, +7

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringIcp PowerEngineering +10

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

I. Adesida, A. Mahajan, E. Andideh, +3

Applied Physics Letters

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

S. J. Pearton, C. R. Abernathy, F. Ren, +3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceAluminium NitrideElectrical EngineeringElectronic DevicesEngineering +12

Patterning of AlN, InN, and GaN in KOH-based solutions

Jeffrey Mileham, S. J. Pearton, C. R. Abernathy, +3

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Mathematical ProgrammingSemiconductorsMaterials ScienceSemiconductor TechnologyEngineering +12

The Laser‐Controlled Micrometer‐Scale Photoelectrochemical Etching of III–V Semiconductors

Mark N. Ruberto, Xiaoge Zhang, R. Scarmozzino, +3

Journal of The Electrochemical Society

Optical MaterialsEngineeringLaser ApplicationsSpot SizeOptoelectronic Devices +15

Photoelectrochemical etching of <i>p</i>-GaAs

F. W. Ostermayer, Paul A. Kohl

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringLaser ApplicationsSemiconductor MaterialsOptoelectronic Devices +16

Study of chemically assisted ion beam etching of GaN using HCl gas

A. T. Ping, I. Adesida, M. Asif Khan

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringHydrogen Chloride GasIon Beam EnergyChemical Engineering +16

OPTICAL ABSOPTION OF GaN

J. I. Pánkové, H. Paul Maruska, J. E. Berkeyheiser

Applied Physics Letters

Wide-bandgap SemiconductorPhotonicsOptical MaterialsEngineeringPhotoluminescence +9