Dopant-selective photoenhanced wet etching of GaN

Metal contacts to gallium nitride

James Foresi, T. D. Moustakas · Applied Physics Letters · 1993 · 330 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Room-temperature photoenhanced wet etching of GaN

M. S. Minsky, Mark White, Evelyn L. Hu · Applied Physics Letters · 1996 · 289 citations

Materials Science, Chemical Engineering, Electronic Devices +15

Inductively coupled plasma etching of GaN

R. J. Shul, G McClellan, S.A. Casalnuovo et al. · Applied Physics Letters · 1996 · 212 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)

I. Adesida, A. Mahajan, E. Andideh et al. · Applied Physics Letters · 1993 · 181 citations

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

S. J. Pearton, C. R. Abernathy, F. Ren et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 101 citations

Materials Science, Aluminium Nitride, Electrical Engineering +14