Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Thermochemical data of pure substances

Choice Reviews Online · 1993 · 4.5K citations

Natural Sciences, Biochemistry, Chemistry +14

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Control of preferred orientation for ZnO films: control of self-texture

Norifumi Fujimura, Tokihiro Nishihara, Seiki Goto et al. · Journal of Crystal Growth · 1993 · 682 citations

Natural Sciences, Materials Engineering, Materials Science +10

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Ting Lei, M. Fanciulli, R. J. Molnar et al. · Applied Physics Letters · 1991 · 371 citations

Engineering, Materials Engineering, Materials Science +17