RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures

On the Potential of SiGe HBTs for Extreme Environment Electronics

John D. Cressler · Proceedings of the IEEE · 2005 · 230 citations

Engineering, Electrical Engineering, Materials Science +17

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

John D. Cressler, J.H. Comfort, E.F. Crabbé et al. · IEEE Transactions on Electron Devices · 1993 · 109 citations

Engineering, Electrical Engineering, Microelectronics +16

SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications

Jae-Sung Rieh, B. Jagannathan, D. Greenberg et al. · IEEE Transactions on Microwave Theory and Techniques · 2004 · 88 citations

Engineering, Communication, Electrical Engineering +17

Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology

J. Roldán, W.E. Ansley, John D. Cressler et al. · IEEE Transactions on Nuclear Science · 1997 · 64 citations

Engineering, Electrical Engineering, Electronic Materials +15

A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

Pei-Der Tseng, Liyang Zhang, Guang-Bo Gao et al. · IEEE Journal of Solid-State Circuits · 2000 · 64 citations

Engineering, Electrical Engineering, Analog Electronics +16