W.E. Ansley

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

Guofu Niu, John D. Cressler, Shiming Zhang et al. · IEEE Transactions on Electron Devices · 2001 · 92 citations

Device Modeling, Electrical Engineering, Engineering +15

Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology

J. Roldán, W.E. Ansley, John D. Cressler et al. · IEEE Transactions on Nuclear Science · 1997 · 64 citations

Electrical Engineering, Engineering, Physics +13

An investigation of the spatial location of proton-induced traps in SiGe HBTs

J. Roldán, Guofu Niu, W.E. Ansley et al. · IEEE Transactions on Nuclear Science · 1998 · 55 citations

Engineering, Nuclear Physics, Mev Proton Irradiation +16

Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications

Guofu Niu, W.E. Ansley, Shiming Zhang et al. · IEEE Transactions on Electron Devices · 1999 · 45 citations

Engineering, Radio Frequency, Uhv/cvd Sige Hbt +21

Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's

W.E. Ansley, John D. Cressler, D.M. Richey · IEEE Transactions on Microwave Theory and Techniques · 1998 · 32 citations

Engineering, Vlsi Design, Base-profile Optimization +18