Low-temperature growth of InGaN films over the entire composition range by MBE

When group-III nitrides go infrared: New properties and perspectives

Junqiao Wu · Journal of Applied Physics · 2009 · 924 citations

Wide-bandgap Semiconductor, Optical Materials, Group-iii Nitrides +22

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 801 citations

Gallium Oxide, Gallium Nitride Epitaxy, Applied Physics +1

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

R. Singh, D. Doppalapudi, T. D. Moustakas et al. · Applied Physics Letters · 1997 · 485 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +11

InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

F.K. Yam, Z. Hassan · Superlattices and Microstructures · 2007 · 235 citations

Engineering, Emission Mechanisms, Energy Conversion +5

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

Michael W. Moseley, J. E. Lowder, Daniel Billingsley et al. · Applied Physics Letters · 2010 · 56 citations

Engineering, Chemical Deposition, Mineral Processing +23