Michael W. Moseley

Vertical GaN Power Diodes With a Bilayer Edge Termination

Jeramy Ray Dickerson, Andrew A. Allerman, Benjamin N. Bryant et al. · IEEE Transactions on Electron Devices · 2015 · 116 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson et al. · Applied Physics Letters · 2015 · 86 citations · Full text

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

Brendan Gunning, J. E. Lowder, Michael W. Moseley et al. · Applied Physics Letters · 2012 · 76 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Yuewei Zhang, Zane Jamal-Eddine, Fatih Akyol et al. · Applied Physics Letters · 2018 · 76 citations

Uv Leds, Wide-bandgap Semiconductor, Engineering +18

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

Gon Namkoong, Elaissa Trybus, Kyung Keun Lee et al. · Applied Physics Letters · 2008 · 74 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10