Surface morphological studies of green InGaN/GaN multi-quantum wells grown by using MOCVD

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Tetsuya Takeuchi, Shigetoshi Sota, Maki Katsuragawa et al. · Japanese Journal of Applied Physics · 1997 · 1.2K citations

Natural Sciences, Materials Engineering, Materials Science +17

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Applied Physics Letters · 1995 · 596 citations

Engineering, Electrical Engineering, Materials Science +17

Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers

Makoto Shiojiri, Chang‐Cheng Chuo, J. T. Hsu et al. · Journal of Applied Physics · 2006 · 138 citations

Natural Sciences, Materials Science, Physics +17

Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

S. M. Ting, J. Ramer, D. I. Florescu et al. · Journal of Applied Physics · 2003 · 98 citations

Natural Sciences, Materials Engineering, Materials Science +17