Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE

The optical properties of luminescence centres in silicon

Gordon Davies · Physics Reports · 1989 · 551 citations

Natural Sciences, Materials Science, Physics +14

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer, Tamara Ebner, K. Thonke et al. · Physical review. B, Condensed matter · 1999 · 228 citations

Natural Sciences, Materials Engineering, Materials Science +17

The Effect of Low Pressure on the Structure of LPCVD Polycrystalline Silicon Films

Pierre-Yves Joubert, B. Loisel, Y. Chouan et al. · Journal of The Electrochemical Society · 1987 · 174 citations

Natural Sciences, Materials Engineering, Materials Science +17

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)

H. Lahrèche, P. Vennéguès, O. Tottereau et al. · Journal of Crystal Growth · 2000 · 102 citations

Engineering, Materials Engineering, Materials Science +14

On the nature of the 3.41 eV luminescence in hexagonal GaN

Stefan Fischer, G. Steude, D.M. Hofmann et al. · Journal of Crystal Growth · 1998 · 79 citations

Engineering, Materials Science, Physics +13