InAs quantum dots grown on InAlGaAs lattice matched to InP

Multidimensional quantum well laser and temperature dependence of its threshold current

Yasuhiko Arakawa, H. Sakaki · Applied Physics Letters · 1982 · 3.3K citations

Engineering, Electrical Engineering, Physics +17

Low threshold, large <i> T _o </i> injectionlaser emissionfrom (InGa)As quantum dots

N. Kirstaedter, N. N. Ledentsov, Marius Grundmann et al. · Electronics Letters · 1994 · 806 citations

Engineering, Electrical Engineering, Materials Science +17

Ultranarrow Luminescence Lines from Single Quantum Dots

Marius Grundmann, J. Christen, N. N. Ledentsov et al. · Physical Review Letters · 1995 · 738 citations

Engineering, Materials Science, Condensed Matter Physics +16

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

Gain and intervalence band absorption in quantum-well lasers

Masahiro Asada, Atsushi Kameyama, Y. Suematsu · IEEE Journal of Quantum Electronics · 1984 · 454 citations

Engineering, Electrical Engineering, Optoelectronics +16