M. P. Pires - Concepedia

Author

M. P. Pires

Pontifícia Universidade Católica do Rio de Janeiro ORCID

Also Known As

M P Pires, M. P. PIRES, M. P. Pires, M. Pamplona Pires, M.P Pires, M.P. Pires, Marcus Pires, Matheus Pires, Mauricio P. Pires, Mauricio Pamplona Pires

142

Publications

586

Citations

H-Index

Concepts

All Affiliations

Pontifícia Universidade Católica do Rio de Janeiro Universidade Federal do Rio de Janeiro Instituto Nacional de Tecnologia Universidade Estadual de Campinas (UNICAMP)Arizona State University

About

M. P. Pires is an author at Pontifícia Universidade Católica do Rio de Janeiro specializing in applied physics, optoelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	18	297
2	Applied Physics	13	18	297
3	Electrical Engineering	7	7	107
4	Materials Science	5	5	89
5	Natural Sciences	2	2	33

M. P. Pires

Publications

322

Citations

H-Index

Page 1

	Year	Citations
Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells Eleonora Cominato Weiner, R. Jakomin, Daniel Neves Micha, Solar Energy Materials and Solar Cells Optical MaterialsEngineeringPhysicsOptical PropertiesApplied Physics	2018	36
InGaAs focal plane array developments at III-V Lab Anne Rouvié, Jean‐Luc Reverchon, O. Huet, Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE	2012	25
InAs quantum dots grown on InAlGaAs lattice matched to InP Magnus T. Borgström, M. P. Pires, Tomas Bryllert, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringPhysicsQuantum Device	2003	21
Chirp dependence in InGaAs/InAlAs multiple quantum well electro-absorptive modulators near polarization-independent conditions M. P. Pires, B. Yavich, P. L. Souza Applied Physics Letters Quantum SciencePhotonicsElectrical EngineeringChirp DependenceElectro-absorptive Modulators	1999	21
Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation Hongen Xie, R. Prioli, Alec M. Fischer, Journal of Applied Physics Materials ScienceIi-vi SemiconductorEngineeringMisfit Strain RelaxationPhysics	2016	21
InAs quantum dot growth on Al<i>x</i>Ga1−<i>x</i>As by metalorganic vapor phase epitaxy for intermediate band solar cells R. Jakomin, Rudy M. S. Kawabata, R. T. Mourão, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	2014	20
Exploring Parity Anomaly for Dual Peak Infrared Photodetection Germano Maioli Penello, Marcos H. Degani, M. Z. Maialle, IEEE Journal of Quantum Electronics Categoryquantum ElectronicsOptical MaterialsEngineeringOptoelectronic DevicesSemiconductors	2016	17
Detecting Infrared Radiation Beyond the Bandoffset With Intersubband Transitions Lesslie Guerra, Germano Maioli Penello, M. P. Pires, IEEE Photonics Technology Letters Categoryquantum ElectronicsEngineeringInfrared Radiation BeyondOptoelectronic DevicesHeterostructure Bandoffset	2016	16
Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices Germano Maioli Penello, Pedro Henrique Pereira, M. P. Pires, Applied Physics Letters Categoryquantum ElectronicsOptical MaterialsEngineeringOptoelectronic DevicesPhotovoltaics	2018	16
Atomic force nanolithography of InP for site control growth of InAs nanostructures H. D. Fonseca-Filho, R. Prioli, M. P. Pires, Applied Physics Letters Materials ScienceAtomic Force NanolithographyInas NanostructuresEngineeringInp Substrates	2007	15

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