R. Jakomin - Concepedia

Author

R. Jakomin

Centre National de la Recherche Scientifique ORCID

Also Known As

De Wild-Scholten, M., Jakomin, Roberto, Pinto, L.D., R Jakomin, R. Jakomin, Roberto Jakomin, Sagnes, I.

Publications

549

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Universidade Federal do Rio de Janeiro Pontifícia Universidade Católica do Rio de Janeiro Instituto Nacional de Tecnologia Université Paris-Sud

About

R. Jakomin is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	431
2	Applied Physics	11	11	421
3	Natural Sciences	1	1	16
4	Chemical Engineering	1	1	23
5	Chemistry	1	1	23

R. Jakomin

Publications

443

Citations

H-Index

Page 1

	Year	Citations
Optical gain in single tensile-strained germanium photonic wire M. de Kersauson, M. El Kurdi, Sylvain David, Optics Express PhotonicsTensile StrainOptical MaterialsEngineeringPhysics	2011	86
High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition R. Jakomin, M. de Kersauson, M. El Kurdi, Applied Physics Letters EngineeringIi-vi SemiconductorIngaas Buffer LayersNanoelectronicsBand Gap Energy	2011	64
Control of tensile strain in germanium waveguides through silicon nitride layers A. Ghrib, M. de Kersauson, M. El Kurdi, Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorGermanium Ridge WaveguidesSemiconductor Nanostructures	2012	63
Direct and indirect band gap room temperature electroluminescence of Ge diodes M. de Kersauson, R. Jakomin, M. El Kurdi, Journal of Applied Physics SemiconductorsRoom Temperature ElectroluminescenceElectrical EngineeringOptical MaterialsEngineering	2010	56
Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells Eleonora Cominato Weiner, R. Jakomin, Daniel Neves Micha, Solar Energy Materials and Solar Cells Optical MaterialsEngineeringPhysicsOptical PropertiesApplied Physics	2018	36
p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor R. Jakomin, G. Beaudoin, N. Gogneau, Thin Solid Films Materials EngineeringIi-vi SemiconductorChemical EngineeringEngineeringSurface Science	2011	23
Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers M. de Kersauson, Mathias Prost, A. Ghrib, Journal of Applied Physics Optical MaterialsEngineeringBuffer LayerIi-vi SemiconductorIngaas Buffer Layers	2013	23
Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation Hongen Xie, R. Prioli, Alec M. Fischer, Journal of Applied Physics Materials ScienceIi-vi SemiconductorEngineeringMisfit Strain RelaxationPhysics	2016	21
InAs quantum dot growth on Al<i>x</i>Ga1−<i>x</i>As by metalorganic vapor phase epitaxy for intermediate band solar cells R. Jakomin, Rudy M. S. Kawabata, R. T. Mourão, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	2014	20
Detecting Infrared Radiation Beyond the Bandoffset With Intersubband Transitions Lesslie Guerra, Germano Maioli Penello, M. P. Pires, IEEE Photonics Technology Letters Categoryquantum ElectronicsEngineeringInfrared Radiation BeyondOptoelectronic DevicesHeterostructure Bandoffset	2016	16

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