Acta Physica Polonica A · 2014 · 11 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDielectricsOxide SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor ReliabilityGate Dielectric EngineeringGate Oxide DegradationGate Oxide InterfacesGate OxidesOxide DielectricsRadiation StabilityRadiation Stability Of MaterialsStability Under Radiation
The inuence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) lm in the structures with the two-layer gate dielectric SiO2PSG under high-eld FowlerNordheim electron injection can be used for the characteristics modication of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are oered to use for improving the reliability and nding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric lms of MOS-structures due to structural changes in the SiO2 lm and SiSiO2 interface.
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Dielectric breakdown mechanisms in gate oxides
S. Lombardo, J. H. Stathis, B.P. Linder et al. · Journal of Applied Physics · 2005 · 437 citations