LaAlO3 films prepared by MBE on LaAlO3(001) and Si(001) substrates

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

The electronic structure at the atomic scale of ultrathin gate oxides

David A. Muller, T. Sorsch, S. Moccio et al. · Nature · 1999 · 961 citations

Natural Sciences, Materials Science, Physics +16

A Thermodynamic Approach to Selecting Alternative Gate Dielectrics

Darrell G. Schlom, J. H. Haeni · MRS Bulletin · 2002 · 307 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

L. F. Edge, Darrell G. Schlom, R. T. Brewer et al. · Applied Physics Letters · 2004 · 90 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Development of integrated heterostructures on silicon by MBE

Ravi Droopad, Zhiyi Yu, Hao Li et al. · Journal of Crystal Growth · 2003 · 69 citations

Engineering, Materials Engineering, Materials Science +12