Journal of Applied Physics · 1988 · 64 citations · 20 references
Materials ScienceDecay RatesElectrical EngineeringZnte FilmsEngineeringIi-vi SemiconductorTe RatioPhotoluminescenceOxide ElectronicsApplied PhysicsMolecular-beam Epitaxial GrowthInitial Decay RatePhotoelectric MeasurementThin FilmsMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound Semiconductor
ZnTe films have been grown with Zn:Te flux ratios ranging from 1 to 3.2. The highest quality films have been grown with flux ratios between 2 and 3, substrate temperatures between 300 and 325 °C, and a surface reconstruction that is a combination of c(2×2) and (2×1). Films grown under these conditions have x-ray rocking curve half-widths between 125 and 225 arcsec. Photoluminescence spectra show that the relative intensity of emission related to Zn vacancies decreases with increasing Zn:Te ratio. Picosecond photoconductivity measurements show an initial decay rate for photoexcited carriers that correlates well with other material parameters. After several hundred picoseconds, the decay rates for different samples show exponential behavior with a lifetime of approximately 675 ps.
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The nature of the predominant acceptors in high quality zinc telluride
P. J. Dean, H. Venghaus, J. C. Pfister et al. · Journal of Luminescence · 1978 · 167 citations