R. F. Austin

High sensitivity optical image processing device based on CdZnTe/ZnTe multiple quantum well structures

Afshin Partovi, A. M. Glass, David H. Olson et al. · Applied Physics Letters · 1991 · 73 citations

Quantum Photonics, Optical Materials, Engineering +23

Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAs

R. D. Feldman, R. F. Austin, D. W. Kisker et al. · Applied Physics Letters · 1986 · 66 citations

Materials Science, Semiconductors, Electrical Engineering +15

Effects of Zn to Te ratio on the molecular-beam epitaxial growth of ZnTe on GaAs

R. D. Feldman, R. F. Austin, P. M. Bridenbaugh et al. · Journal of Applied Physics · 1988 · 64 citations

Materials Science, Decay Rates, Electrical Engineering +15

Room-temperature excitonic saturation in CdZnTe/ZnTe quantum wells

D. Lee, J. E. Zucker, Anthony Johnson et al. · Applied Physics Letters · 1990 · 60 citations

Ii-vi Semiconductor, Quantum Science, Photoluminescence +12

Growth of Cd1−<i>x</i>Zn<i>x</i>Te by molecular beam epitaxy

R. D. Feldman, R. F. Austin, A. H. Dayem et al. · Applied Physics Letters · 1986 · 54 citations

X-ray Crystallography, X-ray Spectroscopy, Engineering +16