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Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTe
66
Citations
10
References
1986
Year
Materials ScienceIi-vi SemiconductorX-ray Oscillation PatternsEngineeringCrystalline DefectsCrystal Growth TechnologyX-ray DiffractionApplied PhysicsCondensed Matter PhysicsQuantum MaterialsCdte-znte Strained-layer SuperlatticesMolecular Beam EpitaxyEpitaxial GrowthCrystallographySemiconductor Nanostructures
CdTe-ZnTe strained-layer superlattices have been grown for the first time using the molecular beam epitaxy technique. The superlattices have been grown at 285 °C. They have been characterized by electron and x-ray diffraction. The presence of satellite peaks in the x-ray spectra shows that the superlattices are of excellent quality despite the large mismatch between CdTe and ZnTe along the growth axis (Δa/a=6.4%). X-ray oscillation patterns show that the superlattices are three-dimensional crystals.
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