Applied Physics Letters · 2008 · 70 citations · 20 references
Atomic Force MicroscopyNon-volatile MemoryEngineeringEmerging Memory TechnologySingle Layer FilmPhase Change MemoryElectronic DevicesNanoelectronicsFilamentary ConductionMemory DeviceMemory DevicesMaterials ScienceElectrical EngineeringElectronic MemoryMicroelectronicsElectronic MaterialsSurface ScienceApplied PhysicsNonvolatile Memory DevicesSemiconductor MemoryThin Films
This letter reports on reversible switching behavior of metal-insulator-metal type nonvolatile organic memory devices using polyfluorene-derivative (WPF-oxy-F) single layer film. The current-voltage (I-V) characteristics showed that the WPF-oxy-F single layer film has two distinguished resistance states, low resistance state and high resistance state, with four orders of on/off ratio (Ion∕Ioff∼104). From the analysis of I-V curves, area dependent I-V characteristics, and current images obtained by conducting atomic force microscopy we propose that the space charge limited current with filamentary conduction is a potential mechanism for the reversible switching behavior of WPF-Oxy-F memory devices.
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Mechanism for bistability in organic memory elements
Luisa Bozano, B. W. Kean, V. R. Deline et al. · Applied Physics Letters · 2004 · 404 citations
Engineering, Organic Electronics, Semiconductor Materials +20