Mechanism for bistability in organic memory elements

TLDR

The equilibrium current–voltage curve is N‑shaped, with low and high resistance states achieved by applying voltage near the local maximum and minimum. The space‑charge field created by stored charge suppresses further charge injection from the electrodes. Resistive switching in organic semiconductor layers with granular metal particles follows a charge‑storage mechanism described by Simmons and Verderber. Reference: Proc.

Abstract

We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber [Proc. R. Soc. A 391, 77 (1967)]. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current–voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively.