Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of <i>N</i>‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

Abstract

A polymer-memory device based on a copolymer containing carbazole (donor) and Eu-complex (acceptor) groups in a metal/insulator/metal architecture is described. The nonvolatile device has two distinctive bistable conductivity states, and exhibits a high ON/OFF current ratio, a fast response time, and acceptable retention under ambient conditions. Application of a potential sets the device to the high-conductivity ON state by generating holes (see Figure).