1993 · 29 citations · 13 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignIntegrated Circuit DesignMemory DevicesMemory Subsystem DesignPhysical DesignVery-large-scale Integration LayoutDynamic Random-access MemoryDynamic Random-access Memory DesignFuture Cost ProjectionGate Array DesignProcess Technology SelectionProduction Cost AnalysisRandom-access MemoryVery-large-scale Integration (Vlsi) Design
Technological trends for VLSI are discussed, with emphasis on process/device technology and function/performance forecasts. Economic trends are then examined. The production cost and design cost of VLSI are analyzed. Particular attention is given to the production cost of VLSI, for example, DRAMs (dynamic random access memory) and gate arrays, which have driven the progress in silicon-based-memory process technology and in ASIC (application-specific integrated circuit) design technology, respectively. Future production-cost trends are estimated for both.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Anantha P. Chandrakasan, R.W. Brodersen · 2015 · 2.2K citations
Engineering, Computer Engineering, Electrical Engineering +17
Subthreshold slope of thin-film SOI MOSFET's
J.-P. Colinge · IEEE Electron Device Letters · 1986 · 272 citations
Novel high density, stacked capacitor MOS RAM
Mitsumasa Koyanagi, H. Sunami, N. Hashimoto et al. · 1978 · 70 citations
Engineering, Computer Engineering, Electrical Engineering +13