Nanotechnology · 2007 · 13 citations · 22 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDielectricsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsDielectric ConstantDielectric Constant MeasurementLeakage CurrentOxide Thickness MeasurementOxide Thickness UniformitySemiconductor Oxide Thin FilmsThermal StabilityThin-film Dielectrics
Stoichiometric, amorphous, uniform Er2O3 films are deposited on Si(001) substrates by reactive evaporation using a metallic Er source at room temperature in an oxygen ambient pressure of 9 × 10−6 Torr. Transmission electron microscopic measurement shows that the film possesses good thermal stability and forms a sharp interface with its Si substrate after annealing at 700 °C for 30 min in ultrahigh vacuum. The effective dielectric constant (k) of the film is measured to be 12.6, and its effective oxide thickness (EOT) can reach 1.4 nm, with a low leakage current density of 8 × 10−4 A cm−2 at an electric field of 1 MV cm−1 after annealing. The characteristics obtained indicate that ultrathin amorphous Er2O3 film could be a promising candidate for a high-k gate dielectric in Si microelectronic devices.
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High ε gate dielectrics Gd2O3 and Y2O3 for silicon
J. Kwo, M. Hong, A. R. Kortan et al. · Applied Physics Letters · 2000 · 270 citations
Natural Sciences, Materials Engineering, Materials Science +17