Performance improvements of ultraviolet/infrared dual-band detectors

Optical properties of hexagonal GaN

Takahiro Kawashima, Hisashi Yoshikawa, Sadao Adachi et al. · Journal of Applied Physics · 1997 · 327 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Schottky barrier photodetector based on Mg-doped <i>p</i>-type GaN films

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1993 · 187 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

AlGaN ultraviolet photoconductors grown on sapphire

D. Walker, X. Zhang, Patrick Kung et al. · Applied Physics Letters · 1996 · 181 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +10

Dependence of impurity incorporation on the polar direction of GaN film growth

Masatomo Sumiya, K. Yoshimura, Kohji Ohtsuka et al. · Applied Physics Letters · 2000 · 173 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm

Claire Gmachl, Hock M. Ng, Alfred Y. Cho · Applied Physics Letters · 2000 · 116 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17