Hock M. Ng

Scattering of electrons at threading dislocations in GaN

Nils Weimann, L.F. Eastman, D. Doppalapudi et al. · Journal of Applied Physics · 1998 · 615 citations

Engineering, Materials Science, Physics +17

Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

Claire Gmachl, Hock M. Ng, S. N. G. Chu et al. · Applied Physics Letters · 2000 · 254 citations

Engineering, Materials Science, Physics +17

Second-harmonic generation in periodically poled GaN

Aref Chowdhury, Hock M. Ng, Manish Bhardwaj et al. · Applied Physics Letters · 2003 · 183 citations

Natural Sciences, Materials Science, Physics +17

GaN nanotip pyramids formed by anisotropic etching

Hock M. Ng, Nils Weimann, Aref Chowdhury · Journal of Applied Physics · 2003 · 177 citations

Engineering, Materials Engineering, Materials Science +17

Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm

Claire Gmachl, Hock M. Ng, Alfred Y. Cho · Applied Physics Letters · 2000 · 117 citations

Engineering, Materials Engineering, Materials Science +17