Concepedia

MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

Xiaoliang Wang, Cuimei Wang, Guoxin Hu, Hongling Xiao, Cebao Fang, Junxi Wang, Junxue Ran, Jianping Li, Jinmin Li, Zhanguo Wang

Journal of Crystal Growth · 2006 · 23 citations · 9 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAluminum Gallium NitrideAluminum NitrideGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal Growth

References

9

AlGaN/AlN/GaN high-power microwave HEMT

L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations

Engineering, Electrical Engineering, Materials Science +17

Science in China

William S. Cooper, Pei‐Sung Tang · Science · 1940 · 467 citations

Humanities, Biology, History +13

Effect of polarization fields on transport properties in AlGaN/GaN heterostructures

Leon Hsu, W. Walukiewicz · Journal of Applied Physics · 2001 · 149 citations

Engineering, Materials Engineering, Materials Science +17

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Makoto Miyoshi, Hiroyasu Ishikawa, Takashi Egawa et al. · Applied Physics Letters · 2004 · 93 citations

Engineering, Materials Engineering, Materials Science +17

Growth and passivation of AlGaN/GaN heterostructures

J. R. Shealy, T. Prunty, Eduardo M. Chumbes et al. · Journal of Crystal Growth · 2003 · 72 citations

Engineering, Materials Engineering, Materials Science +12