A study of electronic states in a-SiOx and a-SiNx thin films by infrared, auger electron and X-ray photoelectron spectroscopies

Optical and bonding model for non-crystalline SiO and SiO N materials

Herbert R. Philipp · Journal of Non-Crystalline Solids · 1972 · 283 citations

Theory of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>KLL</mml:mi></mml:math>Auger Energies Including Static Relaxation

D. A. Shirley · Physical review. A, General physics · 1973 · 229 citations

Relaxation Process, Engineering, Nuclear Physics +19

Remote plasma enhanced CVD deposition of silicon nitride and oxide for gate insulators in (In, Ga)As FET devices

P. D. Richard, R. J. Markunas, G. Lucovsky et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 78 citations

Engineering, Silicon On Insulator, Plasma Processing +20

Chemical states study of Si in SiOx films grown by PECVD

S. S. Chao, Yasuo Takagi, G. Lucovsky et al. · Applied Surface Science · 1986 · 65 citations

Materials Science, Chemical Engineering, Siox Films +9

Near neighbor chemical bonding effects on Si atom native bonding defects in silicon nitride and silicon dioxide insulators

G. Lucovsky, Shuo-Yen Lin · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 43 citations

Engineering, Silicon On Insulator, Semiconductor Device +22