Sub-0.1 μ electron-beam lithography for nanostructure development

Abstract

This article discusses those factors that lead to resolvability in e-beam lithography. The primary tool of study is the simplex method of linear optimization theory. Resist exposure characteristics can effectively be accounted for using a “minimum contrast” approach. The simplex exposure technique does not require exposure in the normally unexposed field. Feature linearity comparison experiments and boundary placement studies show measurable improvement with simplex when compared to dose scaling or feature boundary resizing. While computational tractability is a significant issue, the technique will rapidly assess whether small groups of features are resolvable. In addition, simplex points to general rules for applying dose modulation to different classes of features.