Japanese Journal of Applied Physics · 1984 · 16 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsSurface ScienceDevice CharacterizationOxide SemiconductorsPhotoelectron SpectroscopySemiconductor InterfacesSemiconductor SurfacesSurface PhysicsChemical State MappingNative Oxide FormationNative Oxide LayersNative Oxide PassivationSemiconductor CharacterizationThin Oxide Films
Angular dependent core-level X-ray photoelectron spectra measurement has been performed for native oxide of single crystal GaAs wafer and proved to be a useful method for obtaining chemical state depth profile near the surface. Metallic arsenic is buried in a growing native oxide layer and stranded at the interface layer of oxide and GaAs substrate.
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GaAs Oxidation and the Ga‐As‐O Equilibrium Phase Diagram
C. D. Thurmond, G. P. Schwartz, G. W. Kammlott et al. · Journal of The Electrochemical Society · 1980 · 199 citations