Concepedia

G. P. Schwartz

GP

56

Publications

2.3K

Citations

25

H-Index

1970

Active since

Affiliations

AT&T (United States)(Current)

Nokia (United States)

Lawrence Berkeley National Laboratory

Alcatel Lucent (Germany)

University of California, Berkeley

G. P. Schwartz is an author at AT&T (United States) specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial SciencePhysicsChemistrySemiconductorsNatural SciencesSurface ScienceCondensed Matter PhysicsThin Films

Publications per year

1970–2025

56

Publications

56

GaAs Oxidation and the Ga‐As‐O Equilibrium Phase Diagram

C. D. Thurmond, G. P. Schwartz, G. W. Kammlott et al. · Journal of The Electrochemical Society · 1980 · 199 citations

Wide-bandgap Semiconductor, Engineering, Plasma Oxidation +16

Surface optical phonons and hydrogen chemisorption on polar and nonpolar faces of GaAs, InP, and GaP

Lawrence H. Dubois, G. P. Schwartz · Physical review. B, Condensed matter · 1982 · 153 citations

Optical Materials, Engineering, Crystal Face +16

Combined chemical and mechanical effects on free radicals in UHMWPE joints during implantation

Muhammad Shah Jahan, Changke Wang, G. P. Schwartz et al. · Journal of Biomedical Materials Research · 1991 · 126 citations

Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaP

G. P. Schwartz, G. J. Gualtieri, James E. Griffiths et al. · Journal of The Electrochemical Society · 1980 · 119 citations

Materials Science, Semiconductors, Ternary Phase Diagrams +15

Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eV

D. E. Aspnes, G. P. Schwartz, G. J. Gualtieri et al. · Journal of The Electrochemical Society · 1981 · 113 citations

Optical Materials, Engineering, Electrode-electrolyte Interface +18

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