Journal of The Electrochemical Society · 1980 · 119 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsThin FilmsMetal OxidesSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesThin Film AnnealingThin Film OxidationAnnealing Temperature EffectsAnodic Oxide FilmsSemiconductor Oxide Thin FilmsTernary Phase DiagramsTernary Phase EquilibriaThermochemistry Of OxidesThin Oxide FilmsThin-film Oxides
A fundamental pattern of oxide‐substrate reactions has been identified in thermally annealed anodic films on and through the use of Raman scattering and ternary phase diagrams. The relevant reactions on and yield interfacial deposits of As and Sb via and . The failure to observe elemental P generation in annealed anodic films on in conjunction with an estimate of the Ga‐P‐O phase diagram suggests that oxide‐oxide reactions occur in the film instead. Formation of either ortho or metaphosphate will depend on the ratio in the film according to and .