Native Oxide Passivation
Native Oxide Passivation is a surface passivation method in semiconductor physics wherein the native oxide layer that spontaneously forms on a material’s surface under ambient conditions acts as a dielectric barrier that reduces surface recombination by chemically stabilizing dangling bonds at the interface.
249
Publications
11.6K
Citations
1.1K
Authors
307
Institutions
Publications per year
2017–2026
44
Parents
249
1–5 of 249
1.1K
5
h-index
4
h-index
4
h-index
4
h-index
4
h-index
1–5 of 1.1K
307
National University of Singapore
Singapore, Singapore
11 h-index
44 publications
1K citations
Stanford University
Stanford, United States
10 h-index
36 publications
5.9K citations

Centre National de la Recherche Scientifique
Paris, France
8 h-index
32 publications
2.4K citations
Institute of Materials Research and Engineering
Singapore, Singapore
7 h-index
22 publications
555 citations

Chinese Academy of Sciences
Beijing, China
6 h-index
12 publications
716 citations
University of Illinois Urbana-Champaign
Urbana, United States
6 h-index
17 publications
979 citations
National Central University
Taoyuan City, Taiwan
6 h-index
14 publications
603 citations
Purdue University West Lafayette
West Lafayette, United States
5 h-index
14 publications
1.4K citations
1–8 of 307
43 publications · 2.5K citations
25
h-index
JES · 18 publications · 615 citations
13
h-index
16 publications · 407 citations
12
h-index
JJAP · 13 publications · 371 citations
12
h-index
13 publications · 469 citations
12
h-index
1–5