Journal of The Electrochemical Society · 2006 · 28 citations · 15 references
Aluminium NitrideEngineeringOptoelectronic DevicesThermal AnnealingSemiconductorsElectronic DevicesP-type Gallium NitrideCompound SemiconductorMaterials ScienceElectrical EngineeringAluminum Gallium NitrideAzo FilmsGallium OxideAl-doped ZnoCategoryiii-v SemiconductorAl-doped Zno FilmsP-type Gan FilmsApplied PhysicsGan Power DeviceThin FilmsOptoelectronics
In this study, Al-doped ZnO (AZO) and films were deposited on p-type GaN films followed by thermal annealing to form ohmic contacts. After thermal annealing, the resistivities of AZO films reduced from to . Both as-deposited AZO and contacts on p-GaN displayed a non-ohmic characteristic. Only the 800°C-annealed contacts exhibited a linear current–voltage characteristic, showing a specific contact resistance of around . After undergoing the annealing in nitrogen ambience, the light transmittance of the films increased from 70% to higher than 90% in the visible range. These results revealed that the contact can serve as a suitable transparent current spreading layer for the fabrication of GaN-based light-emitting devices.
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Electron Spin Resonance Studies of Donors and Acceptors in ZnO
Paul H. Kasai · Physical Review · 1963 · 320 citations
High-transparency Ni/Au ohmic contact to <i>p</i>-type GaN
Jinn‐Kong Sheu, Yan‐Kuin Su, G. C. et al. · Applied Physics Letters · 1999 · 214 citations
Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11