Applied Physics Letters · 1999 · 214 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsLight-emitting DiodesMetal-semiconductor ContactsSemiconductor Device MaterialsThin Film Electrical PropertiesThin-film MaterialsWide-bandgap Semiconductor DevicesContact ResistanceCurrent-voltage CharacterizationCurrent-voltage RelationshipElectron Beam EvaporationGallium NitrideMetallizationOhmic ConductionOptical Transmittance
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current–voltage (I–V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7×10−2 Ω cm2 at an alloying temperature of 450 °C. In addition, the light transmittance of the Ni/Au (2 nm/6 nm) bilayer on p-type GaN was measured to be around 85% at 470 nm. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved.
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Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations
Low resistance ohmic contacts on wide band-gap GaN
Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations