Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources

Abstract

The metalorganic molecular-bean epitaxial (MOMBE) growth of GaAs using trimethylgallium and triethylgallium has been studied. The results of introducing hydrogen into the system are also descrived. Introducing ionized hydrogen into the TMG-As 4 system reduced the carrier concentration from 1×10 20 cm -3 to 1×10 18 cm -3 . Using TEG as a Ga source, epitaxial layers grown at temperatures below 580°C showed n-type conduction and a carrier concentration of about 1×10 17 cm -3 , while those grown at higher temperatures showed p-type conduction.