Carrier Concentration Control
Carrier Concentration Control is a materials engineering methodology that regulates the density of free charge carriers in a semiconductor or transparent conducting oxide through intentional doping, defect engineering, or external stimulation to tailor electrical and optical properties.
601
Publications
37.5K
Citations
3.3K
Authors
772
Institutions
Publications per year
2017–2026
249
601
Controlling the Electronic Structure of Bilayer Graphene
Taisuke Ohta, Aaron Bostwick, Thomas Seyller et al. · Science · 2006 · 3.3K citations
Vacancy-Induced Ferromagnetism of MoS<sub>2</sub> Nanosheets
Liang Cai, Jingfu He, Qinghua Liu et al. · Journal of the American Chemical Society · 2015 · 811 citations
Dual-Gated MoS<sub>2</sub>/WSe<sub>2</sub> van der Waals Tunnel Diodes and Transistors
Tania Roy, Mahmut Tosun, Xi Cao et al. · ACS Nano · 2015 · 649 citations
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772

Chinese Academy of Sciences
Beijing, China
22 h-index
200 publications
12.3K citations
National Institute for Materials Science
Tsukuba, Japan
14 h-index
43 publications
3.4K citations

Tohoku University
Sendai, Japan
14 h-index
46 publications
3.6K citations
University of Chinese Academy of Sciences
Beijing, China
14 h-index
68 publications
3.1K citations
Northwestern University
Evanston, United States
14 h-index
57 publications
8.3K citations
Tokyo Institute of Technology
Tokyo, Japan
12 h-index
47 publications
7K citations

Centre National de la Recherche Scientifique
Paris, France
11 h-index
48 publications
1.8K citations

Harbin Institute of Technology
Harbin, China
10 h-index
59 publications
2.9K citations
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72 publications · 4.7K citations
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37 publications · 1.6K citations
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26 publications · 1.1K citations
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19 publications · 2.1K citations
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JJAP · 27 publications · 1.6K citations
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